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                                    PMEG2015EH_EJ_3 ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 15 January 2010 3 of 9 NXP Semiconductors PMEG2015EH; PMEG2015EJ 20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and I F(AV) rating are available on request. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤0.02. Tstg storage temperature ?65 +150 °C Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air PMEG2015EH [1][2] --330K/W [2][3] --150K/W PMEG2015EJ [1][2] --350K/W [2][3] --150K/W Rth(j-sp) thermal resistance from junction to solder point PMEG2015EH - - 60 K/W PMEG2015EJ - - 55 K/W Table 8. Characteristics Tamb =25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF =10mA [1] - 240 270 mV IF = 100 mA [1] - 300 350 mV IF = 500 mA [1] - 400 460 mV IF =1A [1] - 480 550 mV IF =1.5A [1] - 560 660 mV IR reverse current VR =5V - 5 10 μA VR=8V - 7 20 μA VR=10V - 8 30 μA VR=15V - 10 50 μA VR=20V - 15 70 μA Cd diode capacitance VR =1V; f=1MHz - 4050pF |